长电科技B5817WS/B5818WS/B5819WS肖特基二极管datasheet

xzhask

B5817WS/B5818WS/B5819WS肖特基二极管适用于低压、高频逆变器续流和极性保护应用。


最大额定值和电气特性，单二极管 @TA=25℃

Parameter	Symbol	B5817WS	B5818WS	B5819WS	Unit
Non-Repetitive Peak reverse voltage	VRM	20	30	40	V
Peak repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage	VRRM/VRWM/VR	20	30	40	V
RMS Reverse Voltage	VR(RMS)	14	21	28	V
Average Rectified Output current	Io	1			A
Peak forward surge current @=8.3ms	IFSM	9			A
Repetitive Peak Forward Current	IFRM	1.5			A
power DisSIPation	Pd	250			mW
Thermal Resistance Junction to Ambient	RθJA	500			°C/W
Storage temperature	Tstg	-65~+150			°C

电气特性（Tamb=25℃，除非另有说明）

Parameter	Symbol	Test conditions	MIN	MAX	UNIT
Reverse breakdown voltage	V(BR)	Ir= 1mA B5817WS B5818WS B5819WS	20 30 40		V
Reverse voltage leakage current	Ir	Vr=20V,B5817WS Vr=30V,B5818WS Vr=40V,B5819WS		1	mA
Forward voltage	Vf	B5817WS If=1A,If=3A		0.45 0.75	V
		B5818WS lF=1A,If=3A		0.55 0.875	V
		B5819WS lF=1A,If=3A		0.6 0.9	V
Diode capacitance	Cd	Vr=4V, f=1MHz		120	pF

典型特征


更多详细内容请下载附件查看
B5819WS SOD-323.pdf (357.21 KB, 下载次数: 0)

2022-5-5 10:03 上传

点击文件名下载附件