芯达茂XP015PJE120CL1B1 IGBT datasheet

不能慈悲的佛

XP015PJE120CL1B1特征：
◼ 低开关损耗
◼ 1200V 沟道场截止 IGBT
◼ 具有正温度系数的低 VCE(sat)

应用
◼ 辅助逆变器
◼ 空调
◼ 电机驱动
◼ 不间断电源 (UPS)


IGBT逆变器最大额定值

Symbol	Description	Conditions	Values	Unit
Vces	Collector-EMItter Voltage	Tvj=25°C	1200	V
Vges	Gate-Emitter Voltage	Tvj=25°C	±20	V
lc	Continuous DC Collector current	Tc=25°C	30	A
	Continuous DC Collector Current	Tc=100°C	15	A
ICRM	Repetitive Peak Collector Current	tP=1ms	30	A
Ptot	Total power DisSIPation	Tc=25°C, Tvjmax=175°C	130	W

IGBT逆变器特性参数：

Symbol	Description	Conditions	Values			Unit
			Min.	Typ.	Max.
VF	Forward Voltage	lF=15A, Vge=0V, Tvj=25°C	—	2.0	2.4	V
		lF=15A, Vge=0V, Tvj=125°C	—	1.6	—	V
Irm	Peak Reverse Recovery Current	lF=15A, di/dt=250A/us VR=600V, Vge=-15V Tvj=25°C	—	10.67	—	A
Qr	Recovered Charge		—	1.05	—	uC
Erec	Reverse Recovery Energy		—	0.27	—	mJ
Irm	Peak Reverse Recovery Current	If=15A, di/dt=250A/us Vr=600V, Vge=-15V Tvj=125°C	—	14.31	—	A
Qr	Recovered Charge		—	2.95	—	uC
Erec	Reverse Recovery Energy		—	0.59	—	mJ
RthJC	Thermal Resistance, Junction to Case	per Diode	—	1.75	2	K/W
RthCH	Thermal Resistance, Case to Heatsink	per IGBT Apaste=1W/(m k), AGrease=1W/(m k)	—	1.35	—	K/W
Tvj OP	Virtual Junction Temperature	under Switching	-40	—	150	°C

典型特征曲线


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