芯达茂XP015PJS120CL1B1 Trench Field-Stop IGBT datasheet

不能慈悲的佛

XP015PJS120CL1B1特征：
◼ 低开关损耗
◼ 1200V沟道场截止IGBT
◼ 具有正温度系数的低VCE(sat)

应用
◼ 辅助逆变器
◼ 空调
◼ 电机驱动
◼ 不间断电源 (UPS)

IGBT逆变器
最大额定值

Symbol	Description	Conditions	Values	Unit
Vces	Collector-EMItter Voltage	Tvj=25°C	1200	V
Vges	Gate-Emitter Voltage	Tvj=25°C	±20	V
lc	Continuous DC Collector current	Tc=25°C	30	A
	Continuous DC Collector Current	Tc=100°C	15	A
ICRM	Repetitive Peak Collector Current	tP=1ms	30	A
Ptot	Total power DisSIPation	Tc=25°C, Tvjmax=175°C	130	W

特性参数

Symbol	Description	Conditions	Values			Unit
			Min.	Typ-	Max.
VcE(sat)	Collector-Emitter Saturation Voltage	Vge=15V, lc=15A, Tvj=25°C	—	1.90	2.30	V
		Vge=15V, lc=15A, Tvj=125°C	—	2.40	—	V
VGE(th)	Gate Threshold Voltage	VgeWe，Ic=480uA	5.2	5.8	6.4	V
Ices	Collector-Emitter Leakage Current	VCE= 1200V, VGE=0V	—	—	1	mA
IGES	Gate Leakage Current	Vge=±20V, Vce=0V	—	—	±400	nA
Qg	Total Gate Charge	VCC=960V, VGE=15V, IC=15A	—	68	—	nC
Cies	Input Capacitance	VCE=25V, VGE=0V, f=1MHz	—	903	—	pF
Cres	Reverse Transfer Capacitance		—	48	—	pF
td(on)	Turn-on Delay Time	VCC=600V VGE=± 15V IC=15A RG=39Ω Inductive Load Tvj=25℃	—	112	—	ns
tr	Turn-on Rise Time		—	54	—	ns
td(off)	Turn-off Delay Time		—	112	—	ns
tf	Turn-off Fall Time		—	284	—	ns
Eon	Turn-on Switching Loss		—	5.18	—	mJ
Eoff	Turn-off Switching Loss		—	1.01	—	mJ
td(on)	Turn-on Delay Time	VCC=600V VGE=± 15V IC=15A RG=39Ω Inductive Load Tvj=125℃	—	92	—	ns
tr	Turn-on Rise Time		—	52	—	ns
td(off)	Turn-off Delay Time		—	198	—	ns
tf	Turn-off Fall Time		—	376	—	ns
Eon	Turn-on Switching Loss		—	7.93	—	mJ
Eoff	Turn-off Switching Loss		—	1.58	—	mJ
ISC	SC data	Vge<15V, Vcc=600V tP<10ps, Tvj=25°C	—	37.26	—	A
RthJC	Thermal Resistance, Junction to Case	per IGBT	—	1.00	1.15	K/W
RthCH	Thermal Resistance, Case to Heatsink	per IGBT λPaste=1W/(m·k), λGrease=1W/(m·k)	—	1.05	—	K/W
Tvj OP	Virtual Junction Temperature	under Switching	-40	—	150	°C

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2022-5-6 14:17 上传

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