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XP025PJS120CL1B2特征:
◼ 低开关损耗
◼ 1200V 沟道场截止 IGBT
◼ 具有正温度系数的低 VCE(sat)
应用
◼ 辅助逆变器
◼ 空调
◼ 电机驱动
◼ 不间断 电源 (UPS)
IGBT - 逆变器
最大额定值
Symbol | Description | Conditions | Values | Unit | VcES | Collector-EMItter Voltage | Tvj=25℃ | 1200 | V | Vges | Gate-Emitter Voltage | Tvj=25℃ | ±20 | V | IC | Continuous DC Collector current | Tc=25°C | 50 | A | Continuous DC Collector Current | Tc=100°C | 25 | A | IcRM | Repetitive Peak Collector Current | tP=1 ms | 50 | A | Ptot | Total power DisSIPation | Tc=25°C,Tvjmax=175°C | 190 | W |
特性参数
Symbol | Description | Conditions | Values | Unit | Min. | Typ. | Max. | Vf | Forward Voltage | IF=25A, VGE=0V, Tvj=25℃ | — | 2.0 | 2.4 | V | IF=25A, VGE=0V, Tvj=125℃ | — | 1.6 | — | V | Irm | Peak Reverse Recovery Current | IF=25A, di/dt=250A/us
VR=600V, VGE=-15V
Tvj=25℃ | — | 46 | — | A | Qr | Recovered Charge | — | 1.33 | — | uC | Erec | Reverse Recovery Energy | — | 0.17 | — | mJ | Irm | Peak Reverse Recovery Current | IF=25A, di/dt=250A/us
VR=600V, VGE=-15V
Tvj=125℃ | — | 56 | — | A | Qr | Recovered Charge | — | 2.21 | — | uC | Erec | Reverse Recovery Energy | — | 0.30 | — | mJ | RthJC | Thermal Resistance, Junction to Case | per Diode | — | 0.90 | 1.05 | K/W | RthCH | Thermal Resistance, Case to Heatsink | per IGBT
λPaste=1W/(m·k), λGrease=1W/(m·k) | — | 0.82 | — | K/W | TVJ OP | Virtual Junction Temperature | under Switching | -40 | — | 150 | °C |
更多详细内容请下载附件查看
XP025PJS120CL1B2_V1.1.pdf
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