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XD160B120BV1S3特征：
●高阻断电压，低导通电阻
●低电容高速开关
●易于并联，易于驱动
优势
●更高的系统效率
●降低冷却要求
●增加功率密度
●增加系统开关频率
应用
● 电源
●高压DC/DC转换器
●电机驱动
● 开关电源
●脉冲电源应用
最大额定值（TC=25℃，除非另有说明）
| Symbol | Parameter | Value | Unit | Test Conditions | | VDSmax | Drain-Source Voltage | 1200 | V | VGS=0V, ID=100μA | | VGSMax | Gate-Source Voltage | -10/+25 | V | Absolute maximum values | | VgSop | Gate-Source Voltage | -5/+20 | V | Recommended operational values | | Id | Continuous Drain current | 18 | A | VGS=20V, Tc=25℃ | | 12 | VGS=20V, Tc=100℃ | | ID(pulse) | PulSED Drain Current | 40 | A | Pulse width tp limited by TJmax | | Pd | power DisSIPation | 125 | W | Tc=25℃, TJ=150℃ | | Tj, Tstg | Operating Junction and Storage Temperature | -55 to +150 | °C | |
电气特性（TC=25℃，除非另有说明）
| Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions | | V(BR)DSS | Drain-Source Breakdown Voltage | 1200 | / | / | V | VGS=0V, ID=100μA | | VGS(th) | Gate Threshold Voltage | 2.0 | 2.4 | 4.0 | | VDS=VGS, ID=2.5mA | | / | 1.8 | / | V | Vds=Vgs, lD=2.5mA, Tj=150°C | | Idss | Zero Gate Voltage Drain Current | / | 1 | 100 | µA | Vds=1200V, Vgs=0V | | Igss+ | Gate-Source Leakage Current | / | 10 | 250 | nA | VDS=0V, VGS=25V | | Igss- | Gate-Source Leakage Current | / | 10 | 250 | nA | Vds=0V, Vgs=-10V | | RDS(on) | Drain-Source On-State Resistance | / | 160 | 196 | mΩ | Vgs=20V, Id=10A | | / | 280 | / | Vgs=20V, Id=10A, Tj=150°C | | Ciss | Input Capacitance | / | 890 | / | PF | VGS=0V
VDS=1000V
f=1MHz
VAC=25mV | | Coss | Output Capacitance | / | 54 | / | | Crss | Reverse Transfer Capacitance | / | 8.5 | / | | Eoss | Coss Stored Energy | / | 31 | / | µJ | | Eon | Turn-On Switching Energy | / | 315 | / | µJ | VDS=800V, VGS=-5V/20V
ID=10A, RG(ext)=2.5Ω, L=200μH | | Eoff | Turn-Off Switching Energy | / | 63 | / |
更多详细内容请下载附件查看
XD160B120BV1S3.pdf
(1.07 MB, 下载次数: 0)
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发表于 2022-5-10 15:59:49
