森利威尔SL484 30V/41A/14mΩ增强型MOSFET datasheet

65469

SL484特征
●30V/41A,
RDS(ON)=14mW（最大值）@ VGS=10V
RDS(ON)=20mW（最大值）@ VGS=4.5V
●可靠坚固
●提供无铅和绿色设备（符合RoHS）


绝对最大额定值（TA = 25° C，除非另有说明）

Symbol	Parameter		Rating	Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
Vdss	Drain-Source Voltage		30	V
Vgss	Gate-Source Voltage		±20
Tj	Maximum Junction Temperature		150	°C
Tstg	Storage Temperature Range		-55 to 150
IS	Diode Continuous Forward current	Tc=25°C	20	A
ID	Continuous Drain Current	Tc=25°C	41
		Tc=100°C	26
IDM	PulSED Drain Current	Tc=25°C	103
Pd	Maximum power DisSIPation	Tc=25°C	35.7	W
		Tc=100°C	14.3
RθJC	Thermal Resistance-J unction to Case	Steady State	3.5	°C/W
ID	Continuous Drain Current	Ta=25°C	12.2	A
		Ta=70°C	9.8
Pd	Maximum Power Dissipation	Ta=25°C	3.1	W
		Ta=70°C	2.0
RθJA	Thermal Resistance-J unction to Ambient	t ≤10s	17	°C/W
		Steady State	40
IAS	Avalanche Current, Single pulse (L=0.1mH)		19	A
EAS	Avalanche Energy, Single pulse (L=0.1mH)		18	mJ

电气特性（TA = 25° C，除非另有说明）

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
Static Characteristics
BVdss	Drain-Source Breakdown Voltage	Vgs=0V, Ids=250μA		30	-	-	V
Idss	Zero Gate Voltage Drain Current	Vds=24V, Vgs=0V		-	-	1	μA
			Tj=85°C	-	-	30
VGS(th)	Gate Threshold Voltage	Vds=Vgs, Ids=250μA		1	1.65	2	V
Igss	Gate Leakage Current	Vgs=±20V, VDs=0V		-	-	±100	nA
RDS(ON)	Drain-Source On-state Resistance	Vgs=10V, Ids=20A		-	11.5	14	mΩ
			Tj=125°C	-	16.4	-
		Vgs=4.5V, IDs=10A		-	14.5	20
Gfs	Forward Transconductance	Vds=5V , Id=15A		-	24	-	S

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2022-5-25 17:15 上传

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