森利威尔SL3042 30V/88A/8.5mΩ增强型MOSFET datasheet

65469

特征
●30V/88A,
-RDS(ON)=8.5mW（最大值）@VGS=10V
-RDS(ON)=12mW（最大值）@VGS=4.5V
●提供卓越的Qgd x Rds-on
●100% UIS+Rg测试
●可靠坚固
●提供无铅和绿色设备（符合RoHS）


绝对最大额定值（TA=25°C，除非另有说明）

Symbol	Parameter		Rating	Unit
Common Ratings
Vdss	Drain-Source Voltage		30	V
Vgss	Gate-Source Voltage		±20
Tj	Maximum Junction Temperature		150	°C
Tstg	Storage Temperature Range		-55 to 150
Is	Diode Continuous Forward current	Tc=25°C	20	A
Id	Continuous Drain Current	Tc=25°C	88
		Tc=100°C	31
Idm	PulSED Drain Current	Tc=25°C	123
Pd	Maximum power DisSIPation	Tc=25°C	31	W
		Tc=100°C	12.5
Rθjc	Thermal Resistance-Junction to Case	Steady State	3.9	°C/W
Id	Continuous Drain Current	Ta=25°C	14.4	A
		Ta=70°C	11.6
Pd	Maximum Power Dissipation	Ta=25°C	2.7	W
		Ta=70°C	1.7
RθJA	Thermal Resistance-Junction to Ambient	t≤10s	20	°C/W
		Steady State	47
lAs	Avalanche Current, Single pulse	L=0.1mH	20	A
EAs	Avalanche Energy, Single pulse	L=0.1mH	20	mJ

电气特性（TA = 25° C，除非另有说明）

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
Static Characteristics
BVdss	Drain-Source Breakdown Voltage	VGs=0V, IDs=250μA		30	-	-	V
BVDsst	Drain-Source Breakdown Voltage (transient)	VGS=0V, ID(aval)=15A Tcase=25°C,ttransient=100ns		34	-	-	V
Idss	Zero Gate Voltage Drain Current	Vds=24V, Vgs=0V		-	-	1	μA
			Tj=85°C	-	-	30
VGS(th)	Gate Threshold Voltage	Vds=Vgs, Ids=250卩A		1.5	1.8	2.5	V
Igss	Gate Leakage Current	Vgs=±20V, Vds=0V		-	-	±100	nA
Rds(on)	Drain-Source On-state Resistance	VGS=10V, lDS=20A		-	7	8.5	mΩ
			Tj=125°C	-	10.5	-
		Vgs=4.5V, Ids=10A		-	9.2	12
Gfs	Forward Transconductance	Vds=5V, Ids=10A		-	40	-	S

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