森利威尔SL3406 30V/4.0A/50mΩ增强型MOSFET datasheet

65469

SL3406特征
·30V/4.0A,
-RDS(ON)=50mW(最大值)@VGS=10V
-RDS(ON)=70mW(最大值)@VGS=4.5V
·可靠坚固
·提供无铅和绿色设备（符合RoHS）

应用
·笔记本电脑、便携式设备和电池供电系统中的电源管理。
·负荷开关

绝对最大额定值（TA = 25° C，除非另有说明）

Symbol	Parameter		Rating	Unit
Vdss	Drain-Source Voltage		30	V
Vgss	Gate-Source Voltage		±20
Id	Continuous Drain current	Ta=25°C	4.0	A
		Ta=70°C	3.7
IDM	300卩s PulSED Drain Current	VGS=10V	18
Is	Diode Continuous Forward Current		1	A
Tj	Maximum Junction Temperature		150	°C
Tstg	Storage Temperature Range		-55 to 150
Pd	Maximum power DisSIPation	Ta=25°C	1.4	W
		Ta=70°C	0.9
RθJA	Thermal Resistance-Junction to Ambient	t ≤10sec	90	°c/w
		Steady state	140

电气特性（TA = 25° C，除非另有说明）

Symbol	Parameter	Test Conditions				Unit
			Min.	Typ.	Max.
Static Characteristics
BVdss	Drain-Source Breakdown Voltage	Vgs=0V, Ids=250μA	30	.	.	V
Idss	Zero Gate Voltage Drain Current	Vds=24V, Vgs=0V	.	.	1	μA
		Tj=85°C	.	.	30
Vcs(th)	Gate Threshold Voltage	VDS=VGS, IDS=250μA	1.3	1.8	2.5	V
Igss	Gate Leakage Current	Vgs=±20V, Vds=0V	.	.	±100	nA
RDS(ON)	Drain-Source On-St ate Resistance	VGS=10V, IDS=4A	.	36	50	mΩ
		Vgs=4.5V, Ids=3A	.	49	70
Diode Characteristics
VSD	Diode Forward Voltage	ISD=1A, VGS=0V	.	0.75	1.1	V
trr	Reverse Recovery Time	ISD=4A, dlSD/dt=100A/μs	.	10	.	ns
Qrr	Reverse Recovery Charge		.	4	.	nC

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SL3406 30V4A 50毫欧 SOT23-3L.pdf (894.72 KB, 下载次数: 0)

2022-6-7 11:28 上传

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