意法半导体STL13NM60N 600V/0.320Ω/10A功率MOSFET datasheet

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STL13NM60N器件是使用第二代MDmesh™技术开发的N沟道功率MOSFET。这种革命性的功率MOSFET将垂直结构与公司的带状布局相关联，以产生世界上最低的导通电阻和栅极电荷之一。因此，它适用于要求最严苛的高效转换器。


特征
• 100% 雪崩测试
• 低输入电容和栅极电荷
• 低栅极输入电阻

绝对最大额定值

Symbol	Parameter	Value	Unit
VDS	Drain-source voltage	600	V
VGS	Gate-source voltage	±30	V
ID	Drain current (continuous) at Tc = 25 °C	10	A
ID	Drain current (continuous) at Tc = 100 °C	6.5	A
ID	Drain current (continuous) at Tamb = 25 °C	1.9	A
ID	Drain current (continuous) at Tamb = 100 °C	1.1	A
IDM	Drain current (pulsed)	7.6	A
PTOT	Total dissipation at Tamb = 25 °C	3	W
PTOT	Total dissipation at Tc = 25 °C	90	W
IAR	Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max)	3	A
EAS	Single pulse avalanche energy (starting Tj = 25 °C, lD = lAR, VDD = 50 V)	93	mJ
dv/dt	Peak diode recovery voltage slope	15	V/ns
Tstg	Storage temperature	-55 to 150	°C
Tj	Max. operating junction temperature	150	°C

电气特性
（TC = 25 °C，除非另有说明）
On /off states

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source breakdown voltage	ID = 1 mA, VGS = 0	600			V
IDSS	Zero gate voltage drain current (VGS = 0)	VDS = 600 V			1	µA
		VDS = 600 V, TC=125 °C			100	µA
IGSS	Gate-body leakage current (Vds = 0)	VGS = ± 25 V			±100	nA
VGS(th)	Gate threshold voltage	VDS = VGS, ID = 250 µA	2	3	4	V
RDS(on)	Static drain-source on-resistance	VGS = 10 V, ID = 5 A		0.320	0.385	Ω

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