STL13NM60N器件是使用第二代MDmesh™技术开发的N沟道功率MOSFET。这种革命性的功率MOSFET将垂直结构与公司的带状布局相关联，以产生世界上最低的导通电阻和栅极电荷之一。因此，它适用于要求最严苛的高效转换器。
特征
• 100% 雪崩测试
• 低输入电容和栅极电荷
• 低栅极输入电阻
绝对最大额定值
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source voltage | 600 | V |
| VGS | Gate-source voltage | ±30 | V |
| ID | Drain current (continuous) at Tc = 25 °C | 10 | A |
| ID | Drain current (continuous) at Tc = 100 °C | 6.5 | A |
| ID | Drain current (continuous) at Tamb = 25 °C | 1.9 | A |
| ID | Drain current (continuous) at Tamb = 100 °C | 1.1 | A |
| IDM | Drain current (pulsed) | 7.6 | A |
| PTOT | Total dissipation at Tamb = 25 °C | 3 | W |
| PTOT | Total dissipation at Tc = 25 °C | 90 | W |
| IAR | Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) | 3 | A |
| EAS | Single pulse avalanche energy (starting Tj = 25 °C, lD = lAR, VDD = 50 V) | 93 | mJ |
| dv/dt | Peak diode recovery voltage slope | 15 | V/ns |
| Tstg | Storage temperature | -55 to 150 | °C |
| Tj | Max. operating junction temperature | 150 | °C |
电气特性
（TC = 25 °C，除非另有说明）
On /off states
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
| V(BR)DSS | Drain-source breakdown voltage | ID = 1 mA, VGS = 0 | 600 | | | V |
| IDSS | Zero gate voltage drain current (VGS = 0) | VDS = 600 V | | | 1 | µA |
| VDS = 600 V, TC=125 °C | | | 100 | µA |
| IGSS | Gate-body leakage current (Vds = 0) | VGS = ± 25 V | | | ±100 | nA |
| VGS(th) | Gate threshold voltage | VDS = VGS, ID = 250 µA | 2 | 3 | 4 | V |
| RDS(on) | Static drain-source on-resistance | VGS = 10 V, ID = 5 A | | 0.320 | 0.385 | Ω |
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发表于 2022-7-24 10:00
