STL15N60M2-EP器件是使用MDmesh™M2增强性能(EP)技术开发的N沟道功率MOSFET。由于其条形布局和改进的垂直结构，该器件具有低导通电阻、优化的开关特性和非常低的关断开关损耗，使其适用于要求最苛刻的超高频转换器。
特征
• 极低的栅极电荷
• 出色的输出电容 (COSS) 曲线
• 非常低的关断开关损耗
• 100% 雪崩测试
• 齐纳保护
应用
• 切换应用程序
• 专为超高频转换器 (f > 150 kHz)
绝对最大额定值
| Symbol | Parameter | Value | Unit |
| VGS | Gate-source voltage | ±25 | V |
| ID | Drain current (continuous) at Tcase = 25 °C | 7 | |
| Drain current (continuous) at Tcase = 100 °C | 4.6 | |
| IDM | Drain current (pulsed) | 28 | A |
| PTOT | Total dissipation at Tcase = 25 °C | 55 | W |
| IAR | Avalanche current, repetitive or not repetitive | 1.5 | A |
| EAS | Single pulse avalanche energy | 110 | mJ |
| dv/dt | Peak diode recovery voltage slope | 15 | V/ns |
| dv/dt | MOSFET dv/dt ruggedness | 50 |
| Tstg | Storage temperature range | -55 to 150 | °C |
| Tj | Operating junction temperature range |
电气特性
（Tcase = 25 °C，除非另有说明）
Static
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
| V(BR)DSS | Drain-source breakdown voltage | VGS = 0 V, ID = 1 mA | 600 | | | V |
| IDSS | Zero gate voltage drain current | VGS = 0 V, VDS = 600 V | | | 1 | µA |
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C | | | 100 |
| IGSS | Gate-body leakage current | VDS = 0 V, VGS = ±25 V | | | ±10 | µA |
| VGS(th) | Gate threshold voltage | VDS = VGS, ID = 250 µA | 3.25 | 4 | 4.75 | V |
| RDS(on) | Static drain-source on-resistance | VGS = 10 V, ID = 4.5 A | | 0.390 | 0.418 | Ω |
更多详细内容请下载附件查看
stl15n60m2-ep.pdf
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发表于 2022-7-21 10:14
