新的MDmesh™M6技术融合了著名且整合的SJMOSFET MDmesh系列的最新进展。STMicroelectronics通过其新的M6技术在上一代MDmesh器件的基础上构建，该技术结合了出色的每面积RDS(on)改进与可用的最有效开关行为之一，以及用户友好的体验，以最大限度地提高最终应用效率。
特征
• 降低开关损耗
• 与上一代相比，每个区域的 RDS(on) 更低
• 低栅极输入电阻
• 100% 雪崩测试
• 齐纳保护
应用
• 切换应用程序
• LLC 转换器
• 升压 PFC 转换器
绝对最大额定值
| Symbol | Parameter | Value | Unit |
| VGS | Gate-source voltage | ±25 | V |
| ID | Drain current (continuous) at Tease = 25 °C | 10 | A |
| |
| Drain current (continuous) at Tease = 100 °C | 6.3 | |
| IDM | Drain current (pulsed) | 32 | A |
| PTOT | Total power dissipation at Tease = 25 °C | 90 | W |
| dv/dt | Peak diode recovery voltage slope | 15 | V/ns |
| dv/dt | MOSFET dv/dt ruggedness | 100 |
| Tstg | Storage temperature range | -55 to 150 | °C |
| Tj | Operating junction temperature range |
电气特性
（Tcase = 25 °C，除非另有说明）
On/off states
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
| V(BR)DSS | Drain-source breakdown voltage | VGS = 0 V, ID = 1 mA | 600 | | | V |
| IDSS | Zero gate voltage drain current | VGS = 0 V, VDS = 600 V | | | 1 | |
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C | | | 100 | µA |
| IGSS | Gate-body leakage current | VDS = 0 V, VGS = ±25 V | | | ±5 | µA |
| VGS(th) | Gate threshold voltage | VDS = VGS, ID = 250 µA | 3.25 | 4 | 4.75 | V |
| RDS(on) | Static drain-source on-resistance | ID = 6 A, VGS = 10 V | | 300 | 350 | mΩ |
更多详细内容请下载附件查看
stl17n60m6.pdf
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发表于 2022-7-22 15:34
