STL18N60M2器件是使用MDmesh™ M2技术开发的N沟道功率MOSFET。由于其条形布局和改进的垂直结构，该器件具有低导通电阻和优化的开关特性，使其适用于要求最苛刻的高效转换器。
特征
-极低的栅极电荷
-出色的输出电容 (COSS) 曲线
-100% 雪崩测试
-齐纳保护
绝对最大额定值
| Symbol | Parameter | Value | Unit |
| VGS | Gate-source voltage | ±25 | V |
| ID | Drain current (continuous) at Tc = 25 °C | 9 | A |
| ID | Drain current (continuous) at Tc= 100 °C | 5.5 | A |
| IDM | Drain current (pulsed) | 36 | A |
| PTOT | Total dissipation at Tc = 25 °C | 57 | W |
| IAR | Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) | 2 | A |
| EAS | Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) | 135 | mJ |
| dv/dt | Peak diode recovery voltage slope | 15 | V/ns |
| dv/dt | MOSFET dv/dt ruggedness | 50 | V/ns |
| Tstg | Storage temperature range | -55 to 150 | °C |
| Tj | Operating junction temperature range |
电气特性
（TC = 25 °C，除非另有说明）
On/off states
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
| V(BR)DSS | Drain-source breakdown voltage | VGS=0V,ID=1mA | 600 | | | V |
| IDSS | Zero gate voltage drain current | VGS=0V,VDS=600V | | | 1 | µA |
| VGS=0V,VDS=600V,TC=125°C | | | 100 | µA |
| IGSS | Gate-body leakage current | VDS=0V,VGS=±25V | | | 10 | µA |
| VGS(th) | Gate threshold voltage | VDS=VGS,ID=250µA | 2 | 3 | 4 | V |
| RDS(on) | Static drain-source on-resistance | VGS=10V,ID=4.5A | | 0.278 | 0.308 | Ω |
更多详细内容请下载附件查看
stl18n60m2.pdf
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发表于 2022-7-22 16:46
