STL18N65M2器件是使用MDmesh M2技术开发的N沟道功率MOSFET。由于其条形布局和改进的垂直结构，该器件具有低导通电阻和优化的开关特性，使其适用于要求最苛刻的高效转换器。
特征
• 极低的栅极电荷
• 出色的输出电容 (Coss) 曲线
• 100% 雪崩测试
• 齐纳保护
绝对最大额定值
| Symbol | Parameter | Value | Unit |
| VGS | Gate-source voltage | ±25 | V |
| ID | Drain current (continuous) at Tc = 25 °C | 8 | A |
| Drain current (continuous) at Tc = 100 °C | 5 | A |
| IDM | Drain current pulsed | 32 | A |
| PTOT | Total power dissipation at Tc = 25 °C | 57 | W |
| IAR | Avalanche current, repetitive or non-repetitive (pulse width limited by Tj max) | 1.8 | A |
| EAS | Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) | 120 | mJ |
| dv/dt | Peak diode recovery voltage slope | 15 | V/ns |
| dv/dt | MOSFET dv/dt ruggedness | 50 |
| Tj | Operating junction temperature range | -55 to 150 | °C |
| Tstg | Storage temperature range |
电气特性
TC = 25 °C 除非另有说明
On/off states
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
| V(BR)DSS | Drain-source breakdown voltage | VGS = 0 V, ID = 1 mA | 650 | | | V |
| IDSS | Zero gate voltage drain current | VGS = 0 V, VDS = 650 V | | | 1 | µA |
| VGS = 0 V, VDS = 650 V, TC = 125 °C | | | 100 | µA |
| IGSS | Gate-body leakage current | VDS = 0 V, VGS = ±25 V | | | ±10 | µA |
| VGS(th) | Gate threshold voltage | VDS = VGS, ID = 250 µA | 2 | 3 | 4 | V |
| RDS(on) | Static drain-source on-resistance | VGS = 10 V, ID = 4 A | | 0.290 | 0.365 | Ω |
更多详细内容请下载附件查看
stl18n65m2.pdf
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发表于 2022-7-23 14:23
