STL20N6F7 N沟道功率MOSFET采用STripFET™F7技术，具有增强的沟槽栅极结构，可实现非常低的导通电阻，同时还降低了内部电容和栅极电荷，从而实现更快、更高效的开关。
STL20N6F7特点
• 市场上最低的RDS(on)
• 优异的品质因数 (FoM)
• EMI 抗扰度低 Crss/Ciss 比
• 高雪崩耐用性
绝对最大额定值
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source voltage | 60 | V |
| VGS | Gate-source voltage | ±20 | V |
| ID | Drain current (continuous) at Tc = 25 °C | 100 | A |
| ID | Drain current (continuous) at Tc = 100 °C | 61 | A |
| IDM | Drain current (pulsed) | 400 | A |
| ID | Drain current (continuous) at TpCb = 25 °C | 20 | A |
| ID | Drain current (continuous) at TpCb = 100 °C | 12 | A |
| IDM | Drain current (pulsed) | 80 | A |
| PTOT | Total dissipation at Tc = 25 °C | 78 | W |
| PTOT | Total dissipation at TpCb = 25 °C | 3 | W |
| Tstg | Storage temperature | -55 to 150 | °C |
| Tj | Operating junction temperature |
电气特性
（TC = 25 °C，除非另有说明）
On /off states
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
| V(BR)DSS | Drain-source breakdown voltage | ID = 1 mA, VGS = 0 V | 60 | | | V |
| IDSS | Zero gate voltage drain current | VGS = 0 V，VDS = 60 V | | | 1 | µA |
| IGSS | Gate-body leakage current | VGS = 20 V, VDS = 0 | | | 100 | nA |
| VGS(th) | Gate threshold voltage | VDS = VGS, ID = 250 μA | 2 | | 4 | V |
| RDS(on) | Static drain-source on-resistance | VGS = 10 V, ID = 10 A | | 0.0046 | 0.0054 | Ω |
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发表于 2022-7-26 15:17
