STL22N60DM6高压N沟道功率MOSFET是MDmesh DM6快速恢复
二极管系列的一部分。与之前的MDmesh快速一代相比，DM6结合了极低的恢复电荷(Qrr)、恢复时间(trr)和每面积RDS(on)的出色改进，以及市场上最有效的开关行为之一，可用于要求最苛刻的高-高效电桥拓扑和ZVS相移转换器。
特征
•快速恢复体二极管
•与上一代相比，每个区域的RDS(on)更低
•低栅极电荷、输入电容和电阻
•100%雪崩测试
•极高的dv/dt耐用性
•齐纳保护
绝对最大额定值
| Symbol | Parameter | Value | Unit |
| VGS | Gate-source voltage | ±25 | v |
| ID | Drain current (continuous) at Tc = 25 °C | 13 | A |
| Drain current (continuous) at Tc = 100 °C | 8 | A |
| IDM | Drain current (pulsed) | 42 | A |
| PTOT | Total power dissipation at Tc = 25 °C | 102 | W |
| dv/dt | Peak diode recovery voltage slope | 100 | V/ns |
| di/dt | Peak diode recovery current slope | 1000 | A/μs |
| dv/dt | MOSFET dv/dt ruggedness | 100 | V/ns |
| Tstg | Storage temperature range | -55 to 150 | °C |
| Tj | Operating junction temperature range |
电气特性
TC = 25 °C 除非另有说明
On/off states
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
| V(BR)DSS | Drain-source breakdown voltage | VGS = 0 V, ID = 1 mA | 600 | | | V |
| IDSS | Zero gate voltage drain current | VGS = 0 V, VDS = 600 V | | | 1 | µA |
| VGS=0V,VDS=600V,TC = 125 °C | | | 100 | µA |
| IGSS | Gate-body leakage current | VDS = 0 V, VGS = ±25 V | | | ±5 | µA |
| VGS(th) | Gate threshold voltage | VDS = VGS, ID = 250 µA | 3.25 | 4 | 4.75 | V |
| RDS(on) | Static drain-source on-resistance | VGS = 10 V, ID = 6.5 A | | 220 | 265 | mΩ |
更多详细内容请下载附件查看
stl22n60dm6.pdf
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发表于 2022-7-27 11:47
