STL22N65M5器件是基于MDmeshM5创新垂直工艺技术结合著名的PowerMESH水平布局的N沟道功率MOSFET。由此产生的产品提供极低的导通电阻，使其特别适用于需要高功率和卓越效率的应用。
STL22N65M5特点
•极低的RDS(on)
•低栅极电荷和输入电容
•出色的开关性能
•100%雪崩测试
绝对最大额定值
| Symbol | Parameter | Value | Unit |
| VGS | Gate-source voltage | ±25 | V |
| ID | Drain current (continuous) at Tc = 25 °C | 15 | A |
| Drain current (continuous) at Tc = 100 °C | 9.5 |
| IDM | Drain current (pulsed) | 60 | A |
| PTOT | Total power dissipation at Tc = 25 °C | 110 | W |
| dv/dt | Peak diode recovery voltage slope | 15 | V/ns |
| Tstg | Storage temperature range | -55 to 150 | °C |
| Tj | Operating junction temperature range |
电气特性
（Tcase = 25 °C，除非另有说明）
Static
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
| V(BR)DSS | Drain-source breakdown voltage | VGS = 0 V, ID = 1 mA | 650 | | | V |
| IDSS | Zero gate voltage drain current | VGS = 0 V, VDS = 650 V | | | 1 | µA |
| VGS=0V,VDS=650V,Tcase=125°C | | | 100 |
| IGSS | Gate-body leakage current | VDS = 0 V, VGS = ±25 V | | | ±100 | nA |
| VGS(th) | Gate threshold voltage | VDS = VGS, ID = 250 µA | 3 | 4 | 5 | V |
| RDS(on) | Static drain-source on-resistance | VGS = 10 V, ID = 8.5 A | | 180 | 210 | mΩ |
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发表于 2022-7-27 14:58
