STL24N60DM2高压N沟道功率MOSFET是MDmesh™DM2快速恢复
二极管系列的一部分。它提供非常低的恢复电荷(Qrr)和时间(trr)以及低RDS(on)，使其适用于要求最苛刻的高效转换器以及桥式拓扑和ZVS相移转换器的理想选择。
STL24N60DM2特点
●快速恢复体二极管
●极低的栅极电荷和输入电容
●低导通电阻
●100% 雪崩测试
●极高的 dv/dt 耐用性
●齐纳保护
绝对最大额定值
| Symbol | Parameter | Value | Unit |
| VGS | Gate-source voltage | ±25 | V |
| ID | Drain current (continuous) at Tease = 25 °C | 15 | A |
| Drain current (continuous) at Tease = 100 °C | 9.5 |
| IDM | Drain current (pulsed) | 60 | A |
| PTOT | Total dissipation at Tease = 25 °C | 125 | W |
| dv/dt | Peak diode recovery voltage slope | 40 | V/ns |
| dv/dt | MOSFET dv/dt ruggedness | 50 |
| Tstg | Storage temperature range | -55 to 150 | °C |
| Tj | Operating junction temperature range |
电气特性
（Tcase = 25 °C，除非另有说明）
On/off-state
| Symbol | Parameter | Testconditions | Min. | Typ. | Max. | Unit |
| V(BR)DSS | Drain-source breakdown voltage | VGS=0V,ID=1mA | 600 | | | V |
| IDSS | Zero gate voltage drain current | VGS=0V,VDS=600V | | | 1.5 | µA |
| VGS=0V,VDS=600V,Tcase=125°C | | | 100 |
| IGSS | Gate-body leakage current | VDS=0V,VGS=±25V | | | ±10 | µA |
| VGS(th) | Gate threshold voltage | VDS=VGS,ID=250µA | 3 | 4 | 5 | V |
| RDS(on) | Static drain-source on-resistance | VGS=10V,ID=9A | | 0.195 | 0.220 | Ω |
更多详细内容请下载附件查看
stl24n60dm2.pdf
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发表于 2022-7-28 14:19
