已绑定手机
|
1. Source1-1 (FET1)
2. Gate1 (FET1)
3. Source1-2 (FET1)
4. Source2-1 (FET2)
5. Gate2 (FET2)
6. Source2-2 (FET2)
1. 总体描述
栅极电阻安装双N沟道MOSFET 用于锂离子二次电池保护电路。
2. 特点
- 低源-源接通电阻。Rss(on) typ = 4.5 mΩ (VGS = 4.5 V)
- CSP封装:最小和最薄的尺寸
- 符合RoHS标准(欧盟RoHS/MSL:1级)。
3. 标记符号:33
4. 包装
压花型(热压密封)。10,000个/卷(标准)。
等效电路
等效电路
5. 绝对最大额定值 Ta = 25 °CParameter | Symbol | Rating | Unit | Source-source Voltage | VSS | 12 | V | Gate-source Voltage | VGS | ±8 | V | Source Current (DC) *1 | IS | 8 | A | Source Current (Pulsed) *1,*2 | ISp | 80 | A | Total Power Dissipation *1 | PD | 0.45 | W | Channel Temperature | Tch | 150 | ℃
| Storage Temperature Range | Tstg | - 55 to + 150 | ℃
|
6.热特性 Ta = 25 °C
Parameter | Symbol | Rating | Unit | Thermal resistance (ch-a) | Rth(ch-a) | 278 | ℃ / W | 注 *1 安装在FR4板上(25.4 mm x 25.4 mm x t1.0 mm)。
使用最小的推荐焊盘尺寸(36μm铜)。
7.电气特性 Ta = 25 °C ± 3 °C
Parameter | Symbol | Conditions | Min | Typ | Max | Unit | Source-source Breakdown Voltage | VSSS | IS = 1 mA, VGS = 0 V | 12 |
|
| V | Zero Gate Voltage Source Current | ISSS | VSS = 12 V, VGS = 0 V |
|
| 1 | μA | Gate-source Leakage Current | IGSS | VGS = 8 V, VSS = 0 V |
|
| 10 | μA | VGS = 5 V, VSS = 0 V |
|
| 1 | Gate-source Threshold Voltage | Vth | IS = 1.0 mA, VSS = 10 V | 0.35 | 0.90 | 1.40 | V | Source-source On-state Resistance | RSS(on)1 | IS = 4.0 A, VGS = 4.5 V | 3.4 | 4.5 | 5.7 | mΩ | RSS(on)2 | IS = 4.0 A, VGS = 3.8 V | 3.6 | 4.9 | 6.3 | RSS(on)3 | IS = 4.0 A, VGS = 3.1 V | 4.0 | 5.5 | 7.8 | RSS(on)4 | IS = 4.0 A, VGS = 2.5 V | 4.2 | 6.5 | 11.0 | Body Diode Forward Voltage | VF(s-s) | IF = 8.0 A, VGS = 0 V |
| 0.8 | 1.2 | V | Input Capacitance *1 | Ciss | VSS = 10 V, VGS = 0 V,
f = 1 MHz |
| 4360 |
| pF | Output Capacitance *1 | Coss |
| 720 |
| Reverse Transfer Capacitance *1 | Crss |
| 670 |
| Turn-on delay Time *1,*2 | td(on) | VDD = 10 V, VGS = 0 to 4 V
IS = 4.0 A |
| 2.2 |
| μs | Rise Time *1,*2 | tr |
| 5.3 |
| Turn-off delay Time *1,*2 | td(off) | VDD = 10 V, VGS = 4 to 0 V
IS = 4.0 A |
| 13.9 |
| μs | Fall Time *1,*2 | tf |
| 12.1 |
| Total Gate Charge *1 | Qg | VDD = 10 V VGS = 0 to 4 V IS = 8.0 A |
| 42 |
| nC | Gate-source Charge *1 | Qgs |
| 14 |
| Gate-drain Charge *1 | Qgd |
| 13 |
|
更多内容请查看附件
|
|