AP8024由一个集成的脉冲频率调制器(PFM)控制器和功率MOSFET组成,专为小功率非隔离
开关电源设计。 AP8024内部具有高压启动电路和完善的智能保护,包括可调节的过流保护(OCP)、欠压锁定(UVLO)和过温保护(OTP)。 脉冲频率调制可以实现出色的 EMI 性能。
AP8024 采用 DIP7 封装。
特征
⚫ 内部 650V 耐雪崩智能电源 VDMOSFET
⚫ 内部高压启动电路
⚫ 针对 12V 输出非隔离应用进行优化
⚫ 半封闭稳定输出功率 3.6W @230VAC, DIP7
⚫ 低 EMI 调频
⚫ 出色的恒压调节和高效率
⚫ 出色的保护范围:
可调过流保护(OCP) 过温保护(OTP) 欠压锁定(UVLO)
⚫ 采用 DIP7 封装。
应用
⚫ 非隔离辅助电源
绝对最大额定值 TA = 25℃,除非另有说明
VDD, Supply Voltage Pin | -0.3V~40V |
SW, High-Voltage Pin | -0.3V~650V |
Junction Operating Temperature | -40℃~150℃ |
Storage Temperature Range | -55℃~150℃ |
Lead Temperature (Soldering, 10secs) | 260℃ |
Package Thermal Resistance (DIP7) | 40℃/W |
ESD Voltage Protection (HBM, ESDA/JEDEC JDS-001-2014) | ±4kV |
ESD Voltage ProtectionNOTE1
(Air discharge to pins of AP8024 with ESD Generator) | 8kV |
The Biggest Drain Pulse Current (Tpulse=100us) | 3A |
电气特性
电源部分
TA = 25°C,VDD = 11V,除非另有说明
Parameter | Symbol | Conditions | Min | Typ. | Max | Units |
Drain Break-Down Voltage | BVDss | lsw = 250uA | 650 | 690 | | V |
Off-State Drain Current | lorF | Vsw = 500V | | | 100 | μA |
VDMOS on State Resistance | RDs(ON) | lsw = 400mA,Tj=25℃ | | 13.5 | | Ω |
Start up Threshold | VSW START | VDD = VDDon-1V | | 30 | | V |
Supply Section
Parameter | Symbol | Conditions | Min | Typ. | Max | Units |
Vop Voltage Parameter |
Operating Voltage Range | VDD | After turn-on | 10 | | 20 | V |
VoD Start Up Threshold | VpDon | | 10.5 | 11.5 | 12.5 | V |
VDD Under Voltage Shutdown
Threshold | VDDoff | | 8 | 9 | 10 | V |
Vop Voltage Hysteresis | VDDhys | | | 2.5 | | V |
VpD Clamp Voltage | VDDclamp | | 18 | 20 | 22 | V |
VpD Feedback Reference | VDD-REF | | | 12.3 | | V |
VbD Current Parameter |
VDD Charge Current | IDDch | VDD = 5V | | -3 | | mA |
Off-State Current | lDDoff | VDD= 6V | 0.3 | 0.6 | 0.9 | mA |
Operating Supply Current | IDD1 | VDD= 13V | | 1.2 | | mA |
Operating Supply Current,With
Protection Tripping | IDD FAULT | Vpp= 11V | | 1 | | mA |
控制部分
Parameter | Symbol | Conditions | Min | Typ. | Max | Units |
Current Sense Parameter |
Drain Current Limit | llimit | | 490 | 580 | 670 | mA |
Leading Edge Blanking Time | tLEB | | | 300 | | ns |
Feedback Input |
Minimum Turn OFF Time | toffmin | | 15 | 18 | 21 | US |
Maximum Turn ON Time | tonmax | | | 13 | | US |
Thermal Shutdown |
OTP Threshold | TsD | | 135 | 150 | | ℃ |
OTP Protect Hysteresis | THYST | | | 30 | | ℃ |
Restart Protection |
Restart Time | tRESTART | CvDD=4.7μF | | 3 | | S |