4.1. A bsolute Maximum Ratings 1
RF Input Power ( Vdd1 = Vdd2 = 5 V 10 dBm
Supply Voltage Vdd1, Vdd2 5 .5 V d c
Chan nel Temperature 1 75 C
Co ntinuo us Pdiss ( T = +85 C) (Der at e 8.7 mW/ C above +85 C) 782 m W
T he rm al Resistance ( Channel to die bot tom 115 C /W
Storage Temperature Range 65 C to +150 C
Operating Tempera tu re Range (T A (Performance ) 40 C to + 8 5 C
Op erating Tempera tu re Range (T A 5 5 C to + 8 5 C
ESD Sen sitiv it y HBM) Class 0
4.2 Recommended Operating C onditions
Supply Voltage (Vdd1 = Vdd2 ) +4.5 V dc to +5.5 V dc
Drive Level Range 0 dBm to +6 dBm
4.3 Nomi nal Op e ra ting Performance Cha ra ct e ristics 2
Fo Isolation (with respect to output 24 dB c
3Fo Isolation (with respect to output level) 2 2 dB c
4 Fo Isolation (with respect to output level) 2 3 dB c
Input Re tur n Loss 7 d B
Output R e turn Lo ss 7 d B
SSB Phase Noise ( 1 00 kHz Offset at Output Frequen cy = 19 GHz) 136 d B c/Hz