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海力士HMAA1GS6CJR6N基于16Gb C-die DDR4 SDRAM SO-DIMM

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发表于 2023-6-3 14:05:10 | 显示全部楼层 |阅读模式 来自 广东省深圳市
SK hynix未缓冲的DDR4 SDRAM DIMM(未缓冲的双倍数据速率同步DRAM双线内存模块)是使用DDR4 SDRAM器件的低功耗高速运行内存模块。内存模块)是使用DDR4 SDRAM器件的低功率、高速运行的内存模块。这些无缓冲SDRAM DIMM在安装到个人电脑和工作站等系统中时,可作为主内存使用。

功能介绍

• Power Supply: VDD=1.2V (1.14V to 1.26V)
• VDDQ = 1.2V (1.14V to 1.26V)
• VPP - 2.5V (2.375V to 2.75V)
• VDDSPD=2.25V to 3.6V
• Functionality and operations comply with the DDR4 SDRAM datasheet
• 16 internal banks
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different
bank group accesses are available
• Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Supports ECC error correction and detection
• On-Die Termination (ODT)
• Temperature sensor with integrated SPD for ECC SODIMM
• This product is in compliance with the RoHS directive.
• Per DRAM Addressability is supported
• Internal Vref DQ level generation is available

订购信息
Part  NumberDensityOrganization Component   Composition# of
ranks
HMAA1GS6CJR6N  -  VK/WM/XN8GB1Gx64 1Gx16(H5ANAG6NCJR)*41
HMAA2GS6CJR8N  -  VK/WM/XN16GB2Gx642Gx8(H5ANAG8NCJR)*81
HMAA2GS7CJR8N  -  VK/WM/XN16GB2Gx722Gx8(H5ANAG8NCJR)*91
HMAA4GS6CJR8N-VK/WM/XN32GB4Gx642Gx8(H5ANAG8NCJR)*162
HMAA4GS7CJR8N  -  VK/WM/XN32GB4Gx722Gx8(H5ANAG8NCJR)*182

关键参数
MT/sGradetCK
(ns)
CAS
Latency
(tCK)
tRCD
(ns)
tRP
(ns)
tRAS
(ns)
tRC
(ns)
CL-tRCD-tRP
DDR4-1600-PB1.251113.75
(13.50)*
13.75
(13.50)*
3548.75
(48.50)*
11-11-11
DDR4-1866-RD1.0711313.92
(13.50)*
13.92
(13.50)*
3447.92
(47.50)*
13-13-13
DDR4-2133-TF0.9371514.06
(13.50)*
14.06
(13.50)*
3347.06
(46.50)*
15-15-15
DDR4-2400-UH0.8331714.16
(13.75)*
14.16
(13.75)*
3246.16
(45.75)*
17-17-17
DDR4-2666-VK0.751914.25
(13.75)*
14.25
(13.75)*
3246.25
(45.75)*
19-19-19
DDR4-2933-WM0.6822114.32
(13.75)*
14.32
(13.75)*
3246.32
(45.75)*
21-21-21
DDR4-3200-XN0.6252213.7513.753247.022-22-22

地址表
MT/sGradetCK
(ns)
CAS
Latency
(tCK)
tRCD
(ns)
tRP
(ns)
tRAS
(ns)
tRC
(ns)
CL-tRCD-tRP
DDR4-1600-PB1.251113.75
(13.50)*
13.75
(13.50)*
3548.75
(48.50)*
11-11-11
DDR4-1866-RD1.0711313.92
(13.50)*
13.92
(13.50)*
3447.92
(47.50)*
13-13-13
DDR4-2133-TF0.9371514.06
(13.50)*
14.06
(13.50)*
3347.06
(46.50)*
15-15-15
DDR4-2400-UH0.8331714.16
(13.75)*
14.16
(13.75)*
3246.16
(45.75)*
17-17-17
DDR4-2666-VK0.751914.25
(13.75)*
14.25
(13.75)*
3246.25
(45.75)*
19-19-19
DDR4-2933-WM0.6822114.32
(13.75)*
14.32
(13.75)*
3246.32
(45.75)*
21-21-21
DDR4-3200-XN0.6252213.7513.753247.022-22-22

引脚描述
Pin NameDescriptionPin NameDescription
A0-A16SDRAM address busSCLI2C serial bus clock for SPD-TSE
BA0, BA1SDRAM bank selectSDAI2C serial bus line for SPD-TSE
BG0, BG1SDRAM bank group selectSAO-SA2I2C slave address select for SPD-TSE
RAS n¹SDRAM row address strobePARITYSDRAM parity input
CAS n²SDRAM column address strobeVDDSDRAM I/OO and core power supply
    file:///C:\Users\ADMINI~1\AppData\Local\Temp\ksohtml\clip_image2.pngWE n³SDRAM write enableVPPSDRAM activating power supply
CS0 n, CS1 n,
CS2 n,CS3 n
Rank Select Lines C₀ ,C1Chip ID lines for 3DS components
CKEO, CEK1SDRAM clock enable lines input VREFCASDRAM command/address reference
supply
ODTO, ODT1SDRAM on-die termination control
lines input
VSSPower supply return (ground)
ACT nSDRAM activateVDDSPDSerial SPD-TSE positive power supply
DQ0-DQ63DIMM memory data busALERT nSDRAM ALERT n output
CBO-CB7DIMM ECC check bits
    file:///C:\Users\ADMINI~1\AppData\Local\Temp\ksohtml\clip_image3.pngDQSO t-DQS8 tSDRAM data strobes
(positive line of differential pair)
RESET nSet DRAMs to a Known State
   
DQSO c-DQS8 c
SDRAM data strobes
(negative line of differential pair)
EVENT nSPD signals a thermal event has

occurred
DMO n-DM8 n,
  _     _
DBIO n-DBI8 n
    _      _
SDRAM data masks/data bus inersion

(x8-based x72 DImms)
VTTSDRAM I/O termination supply
CKO t, CK1 tSDRAM clock (positive line of differen-
tial pair)
NCNo connection
CKO c,CK1 cSDRAM  clock  (positive  line  of  differen ·

tial pair)
1. RAS_n是一个与A16复用的函数。
2. CAS_n是一个与A15复用的函数。
3. WE_n是与A14的复用函数。

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发表于 2024-2-26 07:18:50 | 显示全部楼层 来自 俄罗斯
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