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东芯 2G nand flash 67脚 FMND2G08S3D 规格参数

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发表于 2024-1-5 15:24:09 | 显示全部楼层 |阅读模式 来自 广东省深圳市

FEATURES
■ x8/x16 I/O BUS
NAND Interface
- ADDRESS / DATA Multiplexing
■ SUPPLY VOLTAGE
- VCC = 1.8/2.7/3.3 Volt core supply voltage for Program,
Erase and Read operations
■ PAGE READ / PROGRAM
- x8 : (2048+64 spare) byte
- x16: (1024+32 spare) word page
- Synchronous Page Read Operation
- Random access :
25us (Max)
- Serial access :
45ns (1.8V)
25ns (2.7/3.3V)
- Page program time : 200us (Typ)
■ PAGE COPY BACK
- Fast data copy without external buffering
■ CACHE PROGRAM
- Internal buffer to improve the program throughput
■ READ CACHE
■ LEGACY/ONFI 1.0 COMMAND SET
■ FAST BLOCK ERASE
- Block size :
x8 : (128K + 4K) bytes
x16: (64K+2K) words
- Block erase time : 2ms (Typ)
■ MEMORY CELL ARRAY
- x8 : (2K + 64) bytes x 64 pages x 2048 blocks
- x16: (1K + 32) words x 64 pages x 2048 blocks
■ ELECTRONIC SIGNATURE
- Manufacturer Code
- Device Code
■ STATUS REGISTER
■ HARDWARE DATA PROTECTION
■ DATA RETENTION
- 100K cycling Program / Erase cycles
- Data retention : 10 Years(4bit/512byte ECC)
- Block zero is a valid block and will be valid for at least
1K program-erase cycles with ECC


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